|
|
Número de pieza | 2N720A | |
Descripción | GENERAL PURPOSE TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N720A (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
%Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
v CEO
VCER
VCBO
v EBO
Pd
pd
TJ. Tstg
Value
80
100
120
7.0
0.5
2.86
1.8
10.3
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Watt
mW/°C
Watts
mW/°C
°C
Symbol
R&jc
Max
97
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged) dc = 100 mAdc, RrjE ^ 10 ohms)
Collector-Emitter Sustaining Voltaged) dc = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dc = 100 ^Adc, Ie = 0)
Emitter-Base Breakdown Voltage (Ie = 100 /xAdc, lc = 0)
Collector Cutoff Current (Vqb
(VC B
90 Vdc, Ie = 0)
90 Vdc, Ie = 0, Ta
Emitter Cutoff Current (Vbe = 5.0 Vdc, lc_=0)
150°C)
ON CHARACTERISTICS
DC Current Gain
dc = 0.1 mAdc, Vce = 10 Vdc)
(IC = 10 mAdc, Vce = 10 VdcKD
dC = 10 mAdc, Vce = 10 Vdc, Ta =
dC = 150 mAdc, Vce = 10Vdc)|1)
-55°C)
Collector-Emitter Saturation Voltaged)
50 mAdc, Ib = 5.0 mAdc)
150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltaged) dc = 50 mAdc, Ib = 5.0 mAdc)
c(l = 150 mAdc, Is = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain
Bandwidth Product
dc
=
50 mAdc, Vce
=
1°
vdc
-
f
=
20 MHz *
Output Capacitance (Vcb = 10 Vdc, Ie = 0, f = 100 kHz)
Input Capacitance (Vbe = 0-5 Vdc, lc = 0, f = 100 kHz)
Input Impedance dc = 10 mAdc, Vcb = 50 Vdc, f 1 .0 kHz)
dC
=
5.0 mAdc, Vcb
=
1°
Vdc
-
f
:
1.0 kHz)
Voltage Feedback Ratio dc = 1 mAdc, Vcb = 5° Vdc, f = 1 .0 kHz)
dC
=
5.0 mAdc, Vcb
=
1°
vdc
-
f
=
1° kHz >
Small-Signal Current Gain
dc
=
10 mAdc, Vce
=
50 vdc f
'
1.0 kHz)
dc
=
5.0 mAdc, V C E
=
1°
vdc
-
f
;
1.0 kHz)
Output Admittance dc
dc
1 .0 mAdc, Vcb
5.0 mAdc, Vcb
5.0 Vdc, f = 1.0 kHz)
10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width « 300 /us, Duty Cycle =s 2.0%.
2N720A
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N3019 for graphs.
Symbol
Min
Max
D
VCER(s
VCEO(sus)
V(BR)CBO
V(BR)EBO
!CBO
lEBO
100
.010
15
Vdc
Vdc
Vdc
mAdc
HiAdc
"FE
VcE(sat)
v BE(sat)
20
35
20
40
1.2 Vdc
5.0
0.9
1.3
50 MHz
Cobo
PF
Cibo
PF
h ib 20 30 Ohms
4.0 8.0
hrb
1.25
X10- 4
1.50
h ob
0.5 pimhos
0.5
4-9
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2N720A.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N720 | HIGH VOLTAGE GENERAL PURPOSE | STMicroelectronics |
2N720A | HIGH VOLTAGE GENERAL PURPOSE | STMicroelectronics |
2N720A | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
2N720A | Trans GP BJT NPN 80V 0.5A 3-Pin TO-18 | New Jersey Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |