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PDF 2N1893S Data sheet ( Hoja de datos )
| Número de pieza | 2N1893S | |
| Descripción | NPN LOW POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893
2N1893S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol All Devices
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (RBE = 10 Ω)
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
VCEO
VCBO
VEBO
VCER
IC
PT
80
120
7.0
100
500
2N720A 2N1893, S
0.5 0.8
1.8 3.0
Operating & Storage Junction Temperature Range
TJ, Tsrg
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
RθJC
97
58
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10 Ω
V(BR)CER
Collector-Base Cutoff Current
VCB = 120 Vdc
ICBO
VCB = 90 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
VEB = 5.0 Vdc
Units
Vdc
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)*
2N720A
W
0C
Unit
0C/W
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
Min. Max.
Unit
80 Vdc
Vdc
100
µAdc
10 ηAdc
10
µAdc
10
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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