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PDF BFX11 Data sheet ( Hoja de datos )

Número de pieza BFX11
Descripción DUAL AMPLIFIER TRANSISTOR
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! BFX11 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
45
Vdc
VCBO
45
Vdc
VEBO
ic
PD
4.5 Vdc
100 mAdc
One Die Both Die
400 500 mW
mW/°C
pd 0.85 1.4 Watts
mW/°C
Tj. Tstg -65 to +200
°C
BFX11
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1) (Ic = 10 mA, Ib = 0)
Collector-Base Breakdown Voltage
(Ic = 10 uA, Ie = 0)
Emitter-Base Breakdown Voltage
(Ic = 0, lg = 10 jiA)
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
(Vcb = 30 Vdc, Ie = 0)
(V C B = 30 Vdc. = 0, TA = 150°C)
(IC = 0, V£B = 3 Vdc)
DC Current Gain (Ic = 10 jiA, Vce = 5 Vdc)
dC = 100 uA. Vce = 5 Vdc)
(IC = 1 mA, Vce = 5 Vdc)
dC = 50 mA, Vce = 5 Vdc)
Collector-Emitter Saturation Voltage
Base-Emjtter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
(Ic = 50 mAdc, Ib == 2.5 mAdc)
(IC = 50 mAdc, Ib == 2.5 mAdc)
Current-Gain - Bandwidth Product (Ic = 50 mAdc, Vce = 20 Vdc, f = 100 MHz)
Output Capacitance (Vcb = 10 Vdc, = 0, f = 140 kHz)
Input Capacitance
(Veb = 0.5 Vdc, Ic = 0, f = 140 kHz)
Noise Figure
(Ic = 30 uAdc, Vce = 5 Vdc, Rs = 10 kohms, f = 1 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio (2)
Base-Emitter Voltage Differential
(Ic = 100 uAdc, Vce = 5 Vdc)
(Ic = 100 fiAdc, Vce = 5 Vdc)
Base-Emitter Voltage Differential Gradient
(IC = 100 jiAdc, Vce = 5 Vdc, Ta = -55°C to +125°C)
(1 ) Pulse Test: Pulse Width 300 us. Duty Cycle s 2.0%
(2) Lowest hpE reading is taken as hpE1 for this ratio
Symbol
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
lEBO
hFE
VcE(sat)
VBE(sat)
fT
Co bo
Cibo
NF
hFEl/hFE2
.
|VBE1-VBE2l
A(V B E1-VbE2)
at a
Min
50
80
90
80
130
0.8
45 Vdc
45 Vdc
4.5 Vdc
10 nAdc
10 uAdc
100 nAdc
0.25
1.0
8
25
5
1
5
20
Vdc
Vdc
MHz
PF
pF
dB
mVdc
uV/°C
5-35

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