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PDF 2N6468 Data sheet ( Hoja de datos )
| Número de pieza | 2N6468 | |
| Descripción | SILICON PNP POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N6468
SILICON
PNP POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6468 is a silicon
PNP power transistor mounted in a hermetically sealed
metal case, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEX
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
130
130
125
120
5.0
4.0
2.0
40
-65 to +200
4.3
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEX
VCE=120V, VEB=1.5V, RBE=100Ω
ICEX
VCE=120V, VEB=1.5V, RBE=100Ω, TC=150°C
ICER
VCE=100V, RBE=100Ω
ICEO
VCE=60V
IEBO
VEB=5.0V
BVCEX
IC=100mA, VBE=1.5V, RBE=100Ω
130
BVCER IC=100mA, RBE=100Ω
125
BVCEO IC=100mA
120
VCE(SAT) IC=1.5A, IB=150mA
VCE(SAT) IC=4.0A, IB=800mA
VBE(ON) VCE=4.0V, IC=1.5A
VBE(ON) VCE=4.0V, IC=4.0A
hFE VCE=4.0V, IC=1.5A
15
hFE VCE=4.0V, IC=4.0A
5.0
hfe VCE=4.0V, IC=500mA, f=1.0kHz
25
fT VCE=4.0V, IC=1.0A, f=1.0MHz
5.0
MAX
100
2.0
100
1.0
100
1.2
4.0
2.0
3.5
150
UNITS
V
V
V
V
V
A
A
W
°C
°C/W
UNITS
μA
mA
μA
mA
μA
V
V
V
V
V
V
V
MHz
R0 (20-July 2016)
1 page  
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CONTACT US
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Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
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w w w. c e n t r a l s e m i . c o m
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N6468.PDF ] | |
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