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PDF 2N3766 Data sheet ( Hoja de datos )
| Número de pieza | 2N3766 | |
| Descripción | SILICON NPN POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N3766
2N3767
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767
are silicon NPN power transistors manufactured by the
epitaxial base process designed for power amplifier and
medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
2N3766
80
2N3767
100
60 80
6.0
4.0
2.0
25
-65 to +200
7.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEO
VCE=Rated VCEO
IEBO
VEB=6.0V
BVCEO
IC=100mA (2N3766)
60
BVCEO
IC=100mA (2N3767)
80
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE10V, IC=1.0A
hFE VCE=5.0V, IC=50mA
30
hFE VCE=5.0V, IC=500mA
40
hFE VCE=10V, IC=1.0A
20
fT
VCE=10V, IC=500mA, f=10MHz
10
Cob VCB=10V, IE=0, f=100kHz
MAX
10
10
500
500
1.0
2.5
1.5
160
50
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
μA
μA
μA
μA
V
V
V
V
V
MHz
pF
R2 (2-September 2014)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3766.PDF ] | |
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