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PDF 2N3867 Data sheet ( Hoja de datos )
| Número de pieza | 2N3867 | |
| Descripción | PNP SILICON POWER SWITCHING TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3867 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER SWITCHING TRANSISTOR
2N3867
TO-39
Metal Can Package
Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
PD
Tj, Tstg
VALUE
40
40
4.0
3.0
10
0.5
6.0
34.3
1.0
5.71
- 65 to +200
UNITS
V
V
V
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth(j-c)
Rth(j-a)
29
175
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut Off Current
DC Current Gain
SYMBOL
*VCEO(sus)
VCBO
VEBO
ICEX
ICBO
*hFE
Collector Emitter Saturation Voltage
*VCE(Sat)
Base Emitter Saturation Voltage
*VBE(Sat)
TEST CONDITION
IC=20mA, IB=0
IC=100µA, IE=0
IE=100µA, IC=0
VCE=40V, VBE(off)=2V
VCB=40V, IE=0,Tc=150ºC
IC=500mA, VCE=1V
IC=1.5A, VCE=2V
IC=2.5A, VCE=3V
IC=3A, VCE=5V
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MIN
40
40
4.0
50
40
25
20
0.9
MAX
1.0
150
200
0.50
0.75
1.30
1.0
1.4
2.0
ºC/W
ºC/W
UNITS
V
V
V
µA
µA
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N3867.PDF ] | |
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