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PDF BCX70J Data sheet ( Hoja de datos )
| Número de pieza | BCX70J | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BCX70G,H,J,K
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
v EBO
"C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R &JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 2.0 mAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 MAdc, lc = 0)
Collector Cutoff Current
(Vqe = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(V£ B = 4.0 Vdc, cl = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 10 /iAdc, Vqe = 5.0 Vdc)
BCX70G
BCX70H
BCX70J
BCX70K
dC = 2.0 mAdc, Vce = 5.0 Vdc)
BCX70G
BCX70H
BCX70J
BCX70K
dC = 50 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
He = 50 mAdc, Bl = 1.25 mAdc)
dC = 10 mAdc, Ib = 0.25 mAdc)
Base-Emitter Saturation Voltage
dC = 50 mAdc, Iq = 1.25 mAdc)
dC = 50 mAdc, Ib = 0.25 mAdc)
Base-Emitter On Voltage
dC = 2.0 mAdc, Vce = 5.0 Vdc)
BCX70G
BCX70H
BCX70J
BCX70K
Symbol
v (BR)CEO
v(BR)EBO
!CES
!EBO
Min
45
5.0
-
—
"FE
v CE(sat)
v BE(sat)
vBE(on)
20
40
100
120
180
250
380
60
70
90
100
-
0.7
0.6
0.55
Value
45
45
5.0
100
Max
350
2.8
150
357
-
-
20
20
20
220
310
460
630
0.55
0.35
1.05
0.85
0.75
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
"C/W
Unit
Vdc
Vdc
nAdc
IxAdc
nAdc
Vdc
Vdc
Vdc
3^26
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCX70J.PDF ] | |
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