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PDF 2N718A Data sheet ( Hoja de datos )
| Número de pieza | 2N718A | |
| Descripción | NPN SILICON PLANAR TRANSISTOR | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N718A
TO-18
Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
VCER
50
Collector Base Voltage
VCBO
75
Emitter Base Voltage
VEBO
7.0
Power Dissipation @Ta=25ºC
PD 500
Derate Above 25ºC
2.86
Power Dissipation @ Tc=25ºC
PD 1.8
Derate Above 25ºC
10.3
Operating and Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
VCER(SUS)* IC=100mA,RBE<10Ω
VCBO IC=100µA.IE=0
VEBO IE=100µA, IC=0
ICBO VCB=60V, IE=0
VCB=60V, IE=0
Ta=150ºC
IEBO VEB=5V, IC=0
hFE IC=0.1mA,VCE=10V
IC=10mA,VCE=10V
IC=10mA,VCE=10V
Ta= -55 ºC
IC=150mA,VCE=10V
IC=500mA,VCE=10V
VCE(Sat)* IC=150mA,IB=15mA
Base Emitter Saturation Voltage
VBE(Sat)* IC=150mA,IB=15mA
* Pulse Test : Pulse Width < 300µs, Duty cycle < 2%
VALUE
MIN MAX
50
75
7.0
10
10
10
20
35
20
40 120
20
1.5
1.3
UNIT
V
V
V
mW
mW/ºC
W
mW/ºC
ºC
UNIT
V
V
V
nA
µA
nA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N718A.PDF ] | |
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