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PDF 2N708 Data sheet ( Hoja de datos )
| Número de pieza | 2N708 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N708 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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2N708
JAN, JTX AVAILABLE
CASE 22, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Total Device Dissipation (a
Derate above 25°C
Derate above 100°C
Tc = 25°C
Tc = 100X
Operating and Storage Junction
Temperature Range
Symbol
v CEO
V CER
vCBO
v EBO
ic
PD
Pd
TJ* Tstg
Value
Unit
15 Vdc
20 Vdc
40 Vdc
5.0 Vdc
limited by Pq only
360 mW
2.1 mW/t
1.2
680
6.9
6.9
-65 to +200
Watts
mW
mW/°C
mW/°C
X
Refer to 2N2368 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R 6UC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dc = 30 mAdc, Rbe * 10 ohms)
Collector-Emitter Sustaining Voltage (Ir; = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage 0c = 1.0 /*Adc, lp = 0)
Emitter-Base Breakdown Voltage (Ig = 10 /xAdc, \q = 0)
Collector Cutoff Current (Vce = 20 Vdc, Vbe = 0.25 Vdc, TA = + 125°C)
Collector Cutoff Current (Vcb = 20 Vdc, lg = 0)
(V C b = 20 Vdc, Cl = 0, TA = 150°C)
Emitter Cutoff Current (Vbe = 4.0 Vdc, \q = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 0.5 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 1.0Vdc)(1)
(lC = 10 mAdc, V C E = 1 -0 Vdc, TA =
-55°C)(1)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
(lC = 70 mAdc, Ib = 0.7 mAdc, TA = -55°C to +125°C)
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 7.0 mAdc, Ib = 0.7 mAdc, TA = -55°C)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 10 mAdc, Vce = 1° vdC f = 100 MHz)
Output Capacitance
(VC b = 10 Vdc, Ie = 0, 100 kHz « f =£ 1.0 MHz)
Extrinsic Base Resistance
dC = 10 mAdc, Vce = 10 Vdc, f = 300 MHz)
SWITCHING CHARACTERISTICS
Storage Time
dC = 'B1 = >B2 = 1° mAdc)
Turn-On Time
Turn-Off Time
Symbol
v CER(sus)
vCEO(sus)
v (BR)CBO
v (BR)EBO
] CEX
!CBO
!EBO
hFE
v CE(sat)
v BE(sat)
20
15
40
5.0
—
-
-
15
30
15
-
0.72
h
c obo
r b'
ts
l on
l off
300
-
—
-
—
-
Max
145
Unit
°C/W
Max
_
10
0.025
15
0.08
120
0.4
0.4
0.80
0.90
-
6.0
50
Unit
Vdc
Vdc
Vdc
Vdc
/xAdc
/xAdc
/xAdc
—
Vdc
Vdc
MHz
PF
ohms
25 ns
40 ns
70 ns
4-6
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N708.PDF ] | |
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