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PDF 2N708 Data sheet ( Hoja de datos )
| Número de pieza | 2N708 | |
| Descripción | NPN SILICON PLANAR SWITCHING TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N708 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTOR
2N708
TO-18
Metal Can Package
Switching Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
@ Tc=100ºC
Derate above 25ºC
Derate above 100ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
15
20
40
5.0
200
360
2.1
1.2
680
6.9
6.9
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Case
Rth (j-c)
145
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCER (sus) IC=30mA, RBE < 10Ω
Collector Emitter Sustaining Voltage
VCEO (sus)
IC=30mA, IB=0
Collector Base Voltage
Emitter Base Voltage
VCBO
VEBO
IC=1µA, IE=0
IE=10µA, IC=0
Collector Cut Off Current
ICEX
VCE=20V, VBE=0.25V,
Ta= +125ºC
Collector Cut Off Current
ICBO
VCB=20V, IE=0
VCB=20V, IE=0,
Ta=150ºC
Emitter Cut off Current
IEBO
VBE=4V, IC=0
DC Current Gain
hFE IC=0.5mA,VCE=1V
IC=10mA,VCE=1V
IC=10mA,VCE=1V, Ta=
- 55ºC
MIN
20
15
40
5.0
15
30
15
UNIT
V
V
V
V
mA
mW
mW/ ºC
W
mW
mW/ ºC
mW/ ºC
ºC
ºC/W
TYP
MAX
UNIT
V
V
V
V
10 µA
25 nA
15 µA
80 nA
120
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N708.PDF ] | |
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