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PDF VN2010L Data sheet ( Hoja de datos )
| Número de pieza | VN2010L | |
| Descripción | N-Channel Enhancement-Mode MOS Transistors | |
| Fabricantes | TEMIC | |
| Logotipo |  |
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Siliconix
VN2010L/BS107
NĆChannel EnhancementĆMode MOS Transistors
Product Summary
Part Number
VN2010L
BS107
V(BR)DSS Min (V)
200
rDS(on) Max (W)
10 @ VGS = 4.5 V
28 @ VGS = 2.8 V
VGS(th) (V)
0.8 to 1.8
0.8 to 3
ID (A)
0.19
0.12
Features
Benefits
D Low OnĆResistance: 6 W
D Secondary Breakdown Free: 220 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Low Offset Voltage
D FullĆVoltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No HighĆTemperature
RunĆAway"
Applications
D HighĆVoltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TOĆ226AA
(TOĆ92)
S1
G2
D3
Top View
VN2010L
TOĆ92Ć18RM
(TOĆ18 Lead Form)
D1
G2
S3
Top View
BS107
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
VN2010L
BS107
Unit
DrainĆSource Voltage
GateĆSource Voltage
Continuous Drain Current (TJ = 150_C)
P u l s e d D r a i n Ca u r r e n t
Power Dissipation
Maximum JunctionĆtoĆAmbient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 1 0_0C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
200 200
"30
"25
0.19 0.12
0.12
0.8
0.8 0.5
0.32
156 250
-55 to 150
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
P-38283—Rev. B (08/15/94)
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet VN2010L.PDF ] | |
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