|
|
PDF 2N6431 Data sheet ( Hoja de datos )
| Número de pieza | 2N6431 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2N6431 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"a = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
v CBO
VEBO
ic
PD
2N6430 2N6431
200 300
200 300
6.0
50
500
2.86
PD
TJ' Tstg
1.8
10.3
-65 to +200
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
Watts
mW/°C
°c
2N6430
2N6431
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
(IC = 1.0 mAdc, Ib = 0)
2N6430
2N6431
Collector-Base Breakdown Voltage
dC = 0.1 mAdc, Ie = 0)
2 N 6430
2N6431
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 16° Vac>
(Vcb = 200 Vdc)
Emitter Cutoff Current
(V EB = 4.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 1.0 mAdc, Vce
(IC = 10 mAdc, Vce
dC = 30 mAdc, Vce
10 Vdc)
10 Vdc)
10 Vdc)
Collector-Emitter Saturation Voltage
dC = 20 mAdc, Bl = 2.0 mAdc)
Base-Emitter Saturation Voltage
c(l = 20 mAdc, Ib = 2.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
c(l = 10 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(V C B = 20 Vdc, El = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width =£ 300 /as, Duty Cycle =s 2.0%.
2N6430
2N6431
Symbol
v (BR)CEO
v (BR)CBO
V(BR)EBO
Min
200
300
200
300
6.0
lEBO
Max
0.1
0.1
Unit
Vdc
Vdc
,uAdc
jiAdc
"FE
v CE(sat)
v BE(sat)
25
40
50
Ccb
50
MHz
PF
4-201
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N6431.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N6430 | COMPLEMENTART SILICON TRANSISTOR |  Central Semiconductor Corp |
| 2N6430 | Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box |  New Jersey Semiconductor |
| 2N6430 | NPN SILICON TRANSISTORS |  CDIL |
| 2N6430 | GENERAL PURPOSE TRANSISTOR | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |