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PDF 2N5859 Data sheet ( Hoja de datos )
| Número de pieza | 2N5859 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (S TA = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"c
PD
PD
Tj. T stg
Value
40
80
6.0
2.0
1.0
6.0
5.0
28.6
-65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
R&JA
Max
35
175
Unit
°C/W
°C/W .
2N5859
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) (Iq = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (lc = 100 >xAdc, lg = 0)
Emitter-Base Breakdown Voltage He = 10 n-Adc, lc = 0)
Collector Cutoff Current (Vce = 50 Vdc, VBE(off) = 20 vdc)
(Vce = 50 Vdc, VBE(off) = 2-0 Vdc, TA = 75°C)
Collector Cutoff Current (Vcb = 50 Vdc, Iff
(Vqb = 50 Vdc, Ig
0)
o.ta
75°C)
Emitter Cutoff Current (V B E = 5.0 Vdc, Ig = 0)
ON CHARACTERISTICS
DC Current Gain
dc
=
500 mAdc, Vce
=
10 vdc
)
c(l = 1.0 Adc, Vce = 1-0 Vdc)
c(l
=
1.0 Adc, Vce
=
1-0
Vdc
-
TA
= -55°C)
Collector-Emitter Saturation Voltage dc = 500 mAdc, Ib = 50 mAdc)
c{l = 1.0 Adc, Ib = 100 mAdc)
Base-Emitter Saturation Voltage dc = 500 mAdc, Ib = 50 mAdc)
c(l = 1.0 Adc, Ib = 100 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product dc = 50 mAdc, Vce = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance (Vcb = 10 Vdc, Ie = 0, f = 100 kHz)
Emitter-Base Capacitance (V E B = 0.5 Vdc, lc = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(Vce
=
30
Vdc
'
v BE(off)
=
2.0 Vdc, lc
=
10 Adc,
Ibi = 100 mAdc) (Figures 8 and 10)
Rise Time
(Vce = 30 Vdc, V BE (off) = 2.0 Vdc, Cl
BI 1 = 100 mAdc) (Figures 8 and 10)
1.0 Adc,
Storage Time
(Vce = 30 Vdc, lc = 10 Adc,
lBi = lB2 = 100 mAdc) (Figures 9 and 11)
Fall Time
(Vce
=
30 Vdc
'
>C
=
10 Adc
-
'B1 = 'B2 = 100 mAdc) (Figures 9 and 1 1
Symbol
v (BR)CEO
V(BR)CBO
v (BR)EBO
!CEX
!CBO
lEBO
hFE
v CE(sat)
VBE(sat)
fT
Ccb
Ceb
0.8
0.9
0.2
5.0
0.25
5.0
0.1
120
100
0.4
0.7
1.0
1.25
Vdc
Vdc
Vdc
liAdc
jiAdc
jxAdc
Vdc
MHz
pF
pF
4-195
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5859.PDF ] | |
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