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Número de pieza | 2N3962 | |
Descripción | AMPLIFIER TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3962 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
2N3962
Symbol 2N3965 2N3964 2N3963
VCEO
60
45
80
VCBO
v EBO
'C
PD
60
45
6.0
200
0.36
2.06
80
Unit
V
V
V
mA
Watt
mW/°C
pd
Tj. Tstg
1.2
6.85
-65 to +200
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dc = 5.0 ma)
2N3962, 2N3965
2N3963
2 N 3964
Collector-Emitter Breakdown Voltage
dC = 10 nA)
2N3962, 2N3965
2N3963
2 N 3964
Collector-Base Breakdown Voltage
C(I = 10 fiA)
2N3962, 2N3965
2N3963
2N3964
Emitter-Base Breakdown Voltage
dC = 10 mA)
Collector Cutoff Current
(Vce = 50 V; 2N3964 = 40 V)
(VC E = 70 V)
Collector Cutoff Current
(Vce = 50 V)
(VC £ = 70 V)
(Vce = 40 v >
(Vce = so v)
Emitter Cutoff Current
(VE b = 4.0 V)
ON CHARACTERISTICS
DC Current Gain(1)
dc = 10 iiA. vC e = 5.o v)
2N3965, 2N3962
2N3963
2N3962
2N3963
2N3964
2N3965
2N3962, 2N3963
2N3964, 2N3965
dc = 100 /jA, Vce = 5.o v>
2N3962, 2N3963
2N3964, 2N3965
dc = 1.0 mA, Vce = 5.0)
2N3962, 2N3963
2N3964, 2N3965
C(l = 10 /iA, V CE = 5.0, TA = -55X)
2N3962, 2N3963
2N3964, 2N3965
2N3962
2N3963
2N3964
2N3965
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to 2N3798 for graphs.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
! CBO
60
80
45
60
80
45
60
80
45
Max
Vdc
Vdc
Vdc
ices
nAdc
Iebo
nAdc
hFE
100 300
250 500
100
250
100 450
250 600
40
100
4-143
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2N3962.PDF ] |
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