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PDF 2N2060M Data sheet ( Hoja de datos )
| Número de pieza | 2N2060M | |
| Descripción | SILICON DUAL NPN TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N2060M
SILICON
DUAL NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2060M is a silicon
dual NPN transistor utilizing two individual chips mounted
in a hermetically sealed metal case designed for
differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (One Die)
PD
Power Dissipation (Both Dice)
PD
Power Dissipation (One Die, TC=25°C)
PD
Power Dissipation (Both Dice, TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
100
80
60
7.0
500
500
600
1.5
3.0
-65 to +200
UNITS
V
V
V
V
mA
mW
mW
W
W
°C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=80V
2.0
IEBO
VEB=5.0V
2.0
BVCBO
IC=100μA
100
BVCER
IC=10mA, RBE=10Ω
80
BVCEO
IC=30mA
60
BVEBO
IE=100μA
7.0
VCE(SAT) IC=50mA, IB=5.0mA
1.2
VBE(SAT) IC=50mA, IB=5.0mA
0.9
hFE VCE=5.0V, IC=10μA
25 150
hFE VCE=5.0V, IC=100μA
30 150
hFE VCE=5.0V, IC=1.0mA
40 150
hFE VCE=5.0V, IC=10mA
50 200
fT
VCE=10V, IC=50mA, f=20MHz
60
Cob VCB=10V, IE=0, f=1.0MHz
15
Cib VBE=0.5V, IC=0, f=1.0MHz
85
NF VCE=10V, IC=300μA, RS=510Ω,
f=1.0kHz, BW=200Hz
8.0
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
R1 (2-December 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N2060M.PDF ] | |
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