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PDF BCW61C Data sheet ( Hoja de datos )
| Número de pieza | BCW61C | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BCW61A,B,C,D
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 2.0 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(IE = 1-0 MAdc, lc = 0)
Collector Cutoff Current
(Vqe = 32 Vdc)
(Vce = 32 Vdc, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
dC = 10/xAdc, Vce = 5.0 Vdc)
BCW61A
BCW61B
BCW61C
BCW61D
dC = 2.0 mAdc, Vqe = 5.0 Vdc)
BCW61A
BCW61
BCW61C
BCW61D
dC = 50 mAdc, Vqe = 1.0 Vdc)
BCW61A
BCW61
BCW61C
BCW61D
flC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Collector-Emitter Saturation Voltage
dC = 50 mAdc, Ib = 1.25 mAdc)
dC = 10 mAdc, Ib = 0.25 mAdc)
Base-Emitter Saturation Voltage
dC = 50 mAdc, Ib = 1.25 mAdc)
dC = 10 mAdc, Ib = 0.25 mAdc)
Base-Emitter On Voltage
dC = 2.0 mAdc, Vce = 5.0 Vdc)
BCW61A
BCW61B
BCW61C
BCW61D
Symbol
v (BR)CE0
v (BR)EB0
'CES
Min
hFE
v CE(sat)
v BE(sat)
v BE(on)
20
40
100
120
140
250
380
60
80
100
100
125
175
250
350
0.68
0.6
Value
32
32
5.0
100
Max
350
2.8
150
357
Max
220
310
460
630
250
350
500
700
0.55
0.25
1.05
0.85
0.75
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Vdc
nAdc
iuAdc
Vdc
Vdc
3-12
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW61C.PDF ] | |
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