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PDF BCW60D Data sheet ( Hoja de datos )
| Número de pieza | BCW60D | |
| Descripción | Surface Mount General Purpose Si-Epi-Planar Transistors | |
| Fabricantes | Diotec | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCW60D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BCW60A ... BCW60D
BCW60A ... BCW60D
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-31
Power dissipation – Verlustleistung
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dim1e.9nsions - Maße [mm]
1=B 2=E 3=C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEB0
Ptot
IC
ICM
IBM
Tj
TS
Grenzwerte (TA = 25°C)
BCW60A ... BCW60D
32 V
32 V
5V
250 mW 1)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
BCW60A
BCW60B
BCW60C
BCW60D
BCW60A
BCW60B
BCW60C
BCW60D
BCW60A
BCW60B
BCW60C
BCW60D
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
20 140
20 200
40 300
100 460
–
–
–
–
120 170 220
180 250 310
250 350 460
380 500 630
50 –
70 –
90 –
100 –
–
–
–
–
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW60D.PDF ] | |
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