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Número de pieza | MMBV109 | |
Descripción | VOLTAGE VARIABLE CAPACITANCE DIODE | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MMBV109 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! MMBV109
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AA/AB)
VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Symbol
VR
if
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T/\ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstq
•Thermal Resistance Junction to Ambient
R 0JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
30
200
Max
350
2.8
150
357
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted]
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(Ir = 10 /uAdc)
Reverse Voltage Leakage Current
(Vr = 28 Vdc)
Series Inductance
(f = 250 MHz)
Case Capacitance
(f = 1.0 MHz)
Diode Capacitance Temperature Coefficient
(Vr = 3.0 Vdc, f = 1.0 MHz)
Figure of Merit
(V R = 3.0 Vdc, f = 50 MHz)
Diode Capacitance
(Vr = 3.0 Vdc, f = 1.0 MHz)
— —V (BR)
30
Vdc
— —IR 0.1 /uAdc
— -LS 3.0 nH
— -cc 0.1 pF
— -TCC
280 ppm/°C
Q —280 — -
—cT 26
32 PF
3-116
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet MMBV109.PDF ] |
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