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PDF BF845 Data sheet ( Hoja de datos )

Número de pieza BF845
Descripción HIGH VOLTAGE TRANSISTORS
Fabricantes Motorola Semiconductors 
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No Preview Available ! BF845 Hoja de datos, Descripción, Manual

BF844
BF845
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPSA44 for graphs.
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
Rfljc
Rwc
BF BF
844 845
400 350
450 400
6.0
300
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, Ib = 0)
BF844
BF845
Collector-Emitter Breakdown Voltage
(IC = 100 pAdc, Vbe = 0)
BF844
BF845
Collector-Base Breakdown Voltage
(IC = 100 uAdc, Ie = 0)
BF844
BF845
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
Both Types
Collector Cutoff Current
(Vcb = 400 Vdc, Ie = 0)
(VcB = 320 Vdc, Ie = 0)
BF844
BF845
Collector Cutoff Current
(Vce = 400 Vdc, VBE = 0)
(V C E = 320 Vdc, Vbe = 0)
BF844
BF845
Emitter Cutoff Current
(Vbe = 4.0 vdc, ie = o)
ON CHARACTERISTICS
Both Types
DC Current Gain (1)
(IC = 1 .0 mAdc, VCE = 1 Vdc)
(IC = 10 mAdc, VcE = 10 Vdc)
(IC = 50 mAdc, Vce = 1 Vdc)
(IC = 100 mAdc, Vce = 10 Vdc)
Both Types
Both Types
Both Types
Both Types
Collector-Emitter Saturation Voltage (1)
(IC = 1 mAdc, Ib = 0.1 mAdc)
(IC = 10 mAdc, Ib = 1-0 mAdc)
(IC = 50 mAdc, Ib = 5.0 mAdc)
Both Types
Both Types
Both Types
Base-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 10 mAdc)
(1) Pulse Test: Pulse Width S 300 nS
Duty Cycle S 2.0%.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CB0
V(BR)EBO
ICBO
ices
lEBO
hFE
VCE(sat)
VBE (sat)
Min
400
350
450
400
450
400
6.0
-
40
50
45
20
-
Max
-
-
0.1
0.1
500
500
0.1
200
0.4
0.5
0.75
0.75
Unit
Vdc
Vdc
Vdc
Vdc
uAdc
nAdc
uAdc
Vdc
Vdc
2-174

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