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Número de pieza | BF506 | |
Descripción | VHF TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BF506 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BF506
CASE 29-03, STYLE 17
TO-92 (TO-226AA)
VHF TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
"C
PD
pd
Tj, T st g
Symbol
RtfJC
R6»JC
Value
35
40
4.0
50
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, Ib = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
dC = 100 uAdc, l£ = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 nAdc, lc = 0)
V(BR)EBO
Collector Cutoff Current
(Vcb = 20 V, El = 0)
ON CHARACTERISTICS
ICBO
DC Current Gain
dC = 3 mAdc. VcE = 1 Vdc)
SMALL SIGNAL CHARACTERISTICS
hFE
Current-Gain - Bandwidth Product
(IC = 1 mAdc, VcE = 1 Vdc, f = 1 00 MHz)
fT
Collector-Base Capacitance
(Vcb = 1 Vdc, IE = 0, f = 1 .0 MHz)
CCBO
Feedback Capacitance (Grounded Base)
(Vcb = 1 Vdc, l£ = 0, f = 1 .0 MHz)
C rb
Noise Figure
dC = 1 mA, Rs = 50 Q, f = 200 MHz, Vcc = 6 V)
NF
Power Gain
(IC = 3 mA, R L = 1 Kfi, f = 200 MHz, Vcc = 10.8 V)
Gpb
Min.
35
40
4
—
20
400
—
—
—
14
Typ.
—
—
600
0.6
0.15
2.5
22
Max.
—
—
—
100
—
_
0.9
0.25
4
—
Unit
Vdc
Vdc
Vdc
nAdc
MHz
PF
pF
dB
dB
200 MHz POWER GAIN NOISE FIGURE TEST CIRCUIT
50 Al (Receiver
2-170
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BF506.PDF ] |
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