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PDF BF371 Data sheet ( Hoja de datos )
| Número de pieza | BF371 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BF371 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter. Voltage
Collector-Base Voltage
Emitter- Base Voltage
Collector Current - Continuous,
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T st g
Symbol
RtfJC
Rejc
BF BF
371 373
30 45
40 45
4.0
.
100
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
BF371
BF373
CASE 29-02, STYLE 2
TO-92 (TO-226AA)
NPN SILICON
ELECTRICAL CHARACTERISTICS (T A 25 C unless otherwise noted)
Characteristic
Type
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, Ib = 0)
BF371
BF373
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE =: 10 uAdc, Ic = 0)
BF371
BF373
V(BR|CBO
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, Ie = 0)
ON CHARACTERISTICS
ICBO
DC Current Gain
(IC =: 7.0 mAdc, VcE ^ 1 Vdc)
(IC = 20 mAdc, VcE = 2.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 20 mAdc, Ib '= 2.0 mAdc)
Base-Emitter On Voltage
(IC ^ 7.0 mA, VcE = 10 Vdc)
DYNAMIC CHARACTERISTICS
v CE(sat)
v BE(on)
Current-Gain - Bandwidth Product
(IC = 5 mAdc, VcE = 10 Vdc, f = 1 00 MHz)
Common Emitter Feedback Capacitance
(VCB " 10 Vdc, Ie - 0, f -- 1.0 MHz)
BF371
BF373
fT
Cre
Min.
30
45
40
45
4.0
—
40
15
—
—
400
500
—
Typ.
Max.
Unit
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
—
—
—
720
720
0.20
-
0.50
0.90
—
0.32
Vdc
Vdc
MHz
PF
2-161
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BF371.PDF ] | |
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