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PDF 2N3330 Data sheet ( Hoja de datos )
| Número de pieza | 2N3330 | |
| Descripción | JFET AMPLIFIER | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N3330
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Reverse Gate-Source Voltage
Gate Current
Total Device Dissipation (d T/\ = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VDG
vgsr
•g
Pd
Tstg
Value
20
20
10
0.3
2.0
- 65 to + 200
Unit
Vdc
Vdc
mAdc
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(Iq = 10 /iAdc, V DS = 0)
Gate Reverse Current
(VGS = 10 Vdc, V DS = 0)
(VGS = 10 Vdc, Vqs = 0, Ta = 150°C)
ON CHARACTERISTICS
Zero-Gate- Voltage Drain Current! 1)
(VDS = -10Vdc,VG S = 0)
Gate-Source Voltage
( V DG = -15 Vdc, Iq = 10/iAdc)
Drain-Source Resistance
(Iq = 100 /iAdc, Vqs = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance(l)
(VdS = - 10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz)
(VDS = -10 Vdc, Id = 20 mAdc, f = 10 MHz)
Output Admittance
(Vds ,= — 10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz)
Reverse Transfer Conductance
(VDs = -10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz)
Input Conductance
(V DS = -10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz)
Input Capacitance
(Vds = -10 Vdc, Vqs = 10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(Vds = -5-0 Vdc, Id = 1.0 mAdc, Rq = 1.0 Megohm, f = 1.0 kHz)
(1) Pulse Test: Pulse Width s 630 ms, Duty Cycle « 10%.
CASE 20-03, STYLE 5
TO-72 (TO-206AF)
JFET
AMPLIFIER
—P-CHANNEL DEPLETION
Refer to 2N5460 for graphs.
Symbol
V (BR)GSS
! GSS
Min
20
-
toss
vqs
r DS
2.0
—
—
Max
— Vdc
10 nAdc
10 /xAdc
6.0 mAdc
6.0 Vdc
800 Ohms
IVfsl
IVosI
IVrsI
Ivisl
Cj ss
NF
1500
1350
—
—
—
—
—
3000
40
0.1
0.2
20
/tmhos
/xmhbs
/xmhos
iu.mhos
PF
3.0 dB
6-3
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N3330.PDF ] | |
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