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PDF 2N3814S Data sheet ( Hoja de datos )

Número de pieza 2N3814S
Descripción NPN MEDUIM POWER SILICON TRANSISTOR
Fabricantes Microsemi　
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TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/393
Devices
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
tP ≤ 1.0 ms, duty cycle ≤ 50%
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2)
Operating & Storage Temperature Range
1) Derate linearly 5.72 mW/0C for TA > 250C
2) Derate linearly 150 mW/0C for TC > 1000C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
2N3418, S 2N3419, S
2N3420, S 2N3421, S
60 80
85 125
8.0
3.0
5.0
1.0
15
-65 to +200
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 50 mAdc, IB = 0
Collector-Emitter Cutoff Current
VBE = -0.5 Vdc, VCE = 80 Vdc
VBE = -0.5 Vdc, VCE = 120 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc, IB = 0
VCE = 60 Vdc, IB = 0
Emitter-Base Cutoff Current
VEB = 6.0 Vdc, IC = 0
VEB = 8.0 Vdc, IC = 0
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
Symbol
V(BR)CEO
ICEX
ICEO
IEBO
Unit
Vdc
Vdc
Vdc
Adc
W
W/0C
0C
Min.
60
80
TO- 5*
2N3418, 2N3419,
2N3420, 2N3421
TO-39* (TO205-AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
*See Appendix A for
Package Outline
Max.
Unit
Vdc
µAdc
0.3
0.3
µAdc
5.0
5.0
µAdc
0.5
10
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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