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PDF D44H11TU Data sheet ( Hoja de datos )
| Número de pieza | D44H11TU | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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D44H11TU
NPN Epitaxial Silicon Transistor
• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
• Fast Switching Speeds
• Complement to KSE45H
March 2009
1 TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ.
BVCEO
BVEBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 500μA, IC= 0
Collector Cut-off Current
VCE = Rated VCEO, VEB = 0
Emitter Cut-off Current
VEB = 5V, IC = 0
DC Current Gain
VCE = 1V, IC = 2A
Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A
Base-Emitter Saturation Voltage
IC = 8A, IB = 0.8A
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
Output Capacitance
VCB = 10V, f = 1MHz
Turn On Time
Storage Time
Fall Time
VCC = 20V, IC = 5A
IB1 = - IB2 = 0.5A
80
5
60
50
130
300
500
140
NOTES:
1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) These ratings are based on a maximum junction temperature of 150degrees C.
© 2009 Fairchild Semiconductor Corporation
D44H11TU Rev. B1
1
Max.
10
100
Units
V
V
μA
μA
1V
1.5 V
MHz
pF
ns
ns
ns
www.fairchildsemi.com
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