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PDF 2N3792 Data sheet ( Hoja de datos )
| Número de pieza | 2N3792 | |
| Descripción | Power Transistor | |
| Fabricantes | Multicomp | |
| Logotipo |  |
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Power Transistor
Description:
PNP silicon power transistor in a TO-3 package.
Designed for medium-speed switching and amplifier
applications.
Features:
• Excellent Safe Operating Areas
• hFE (Min) 25 and 50 @ IC = 1A
PNP
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current Continuous
Total Device Dissipation at Tc = 25°C
Derate above 25°C
Operating Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
Tj
Rating
Unit
80
80 V
7
10
A
4
150
0.857
W
mW/°C
-65 to +200 °C
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector - Emitter Breakdown Voltage (Note 1)
Collector Cut-Off Current
Emitter Cut-Off Current
ON Characteristics (Note 1)
Symbol
V(BR)CEO
ICEX
IEBO
DC Current Gain
Collector - Emitter Saturation Voltage
Base-Emitter On Voltage
Small-Signal Characteristics
Current Gain-Bandwidth Product
hFE
VCE(sat)
VBE(on)
fT
Test Conditions
IC=200mA, IB=0
VCE=80V, VEB(off)=1.5V
VEB=7V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=3A
IC=5A, IB=0.5A
IC=5A, IB=2V
IC=10A, IB=4V
VCE=10V, IC=500mA,
f=1MHz
Note 1. Plus Test: Pulse Width = 300μs, Duty Cycle %2%.
Min. Max. Unit
80 -
V
-1
mA
-5
50 180
30 -
-1
- 1.8
-4
-
-
V
4 - MHz
www.element14.com
www.farnell.com
www.newark.com
Page <1>
23/04/13 V1.0
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3792.PDF ] | |
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