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PDF 2N5303 Data sheet ( Hoja de datos )
| Número de pieza | 2N5303 | |
| Descripción | NPN HIGH POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/456
Devices
2N5302
2N5303
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +1000C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.57 mW/0C for TA = +250C
2) Derate linearly 1.14 W/0C for TC = +1000C
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
TJ, Tstg
Symbol
RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 200 mAdc, IB = 0
2N5302
2N5303
Collector-Emitter Cutoff Current
VCE = 60 Vdc, IB = 0
2N5302
VCE = 80 Vdc, IB = 0
Emitter-Base Cutoff Current
2N5303
VEB = 5.0 Vdc, IC = 0
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 60 Vdc
VBE = 1.5 Vdc, VCE = 80 Vdc
Collector-Emitter Cutoff Current
2N5302
2N5303
VCE = 60 Vdc
2N5302
VCE = 80 Vdc
2N5303
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N5302 2N5303
60 80
60 80
5.0
30 20
7.5
5.0
115
-65 to +200
Max.
0.875
Symbol
V(BR)CEO
ICEO
IEBO
ICEX
ICBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/0C
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
60 Vdc
80
10 µAdc
10
5.0 µAdc
5.0 µAdc
5.0
5.0 µAdc
5.0
120101
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| PDF Descargar | [ Datasheet 2N5303.PDF ] | |
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