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PDF 2N5058 Data sheet ( Hoja de datos )
| Número de pieza | 2N5058 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N5058
2N5059
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol 2N5058 2N5059
VCEO • 300
vCBO
300
v EBO
7.0
250
250
6.0
ic 150
PD - 1.0
6.67
Pd
TJ. Tstg
5.0
33.3
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
Refer to 2N3724 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
RftjAd)
CELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (2)
dC = 30 mAdc, Is = 0)
2N5058
2N5059
Collector-Base Breakdown Voltage
dC = 100 ^Adc, lg = 0)
2N5058
2N5059
Emitter-Base Breakdown Voltage
(IE = 100 MAdc, Cl = 0)
2N5058
2N5059
Collector Cutoff Current (Vcb = 100 Vdc, lg = 0)
(Vqb = 100 Vdc, El = 0, TA = + 125°C)
Emitter Cutoff Current (Vbe = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS (2)
DC Current Gain
dC = 5.0 mAdc, Vqe = 25 Vdc)
2N5058
2 N 5059
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
'EBO
hFE
dC = 30 mAdc, Vqe = 25 Vdc)
2N5058
2 N 5059
dC = 30 mAdc, Vce = 25 Vdc, TA = -55°C)
2N5058
dC = TOO mAdc, Vce = 25 Vdc)
2N5058
2N5059
Collector-Emitter Saturation Voltage dc = 30 mAdc, lg = 3.0 mAdc)
Base-Emitter Saturation Voltage (Ic = 30 mAdc, Ib = 3.0 mAdc)
Base-Emitter On Voltage (Ic = 30 mAdc, Vce = 25 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product (3) dc = 10 mAdc, Vce = 25 Vdc, f = 20 MHz)
Collector-Base Capacitance (Vcb = 10 Vdc, lg = 0, f = 1.0 MHz)
Emitter-Base Capacitance (Vbe = °- 5 Vq c, Ic = 0, f = 1.0 MHz)
(1) R6j A is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width s= 300 /xs, Duty Cycle « 2.0%.
(3) fj is defined as the frequency at which the |hfe | extrapolates to unity.
VCE(sat)
v BE(sat)
VBE(on)
Ccb
Ceb
Min
300
250
300
250
7.0
6.0
-
-
10
10
35
30
10
35
30
—
—
—
Max
30
150
-
-
-
0.05
20
10
150
150
1.0
0.85
0.82
160
Unit
°C/W
°c/w
Vdc
Vdc
Vdc
/iAdc
nAdc
Vdc
Vdc
Vdc
PF
pF
4-182
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5058.PDF ] | |
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