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PDF 2N3635 Datasheet ( Hoja de datos )

Número de pieza 2N3635
Descripción PNP SILICON PLANAR RF TRANSISTORS
Fabricantes CDIL 
Logotipo CDIL Logotipo

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2N3635 Hoja de datos, Descripción, Manual
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR RF TRANSISTORS
2N3635
2N3636
2N3637
TO-39
Metal Can Package
2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching
and Low Power Amplifier.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
VCEO
VCBO
VEBO
IC
PD
Power Dissipation@ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
2N3635
2N3636, 37
140 175
140 175
5
1
1
5.71
5
28.6
-65 to +200
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Breakdown Voltage BVCEO * IC=10mA, IB =0
2N3635
2N3636, 37
MIN
MAX
UNITS
140 V
175 V
Collector Base Breakdown Voltage
2N3635
2N3636, 37
BVCBO
IC=100µA, IE =0
140 V
175 V
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
BVEBO IE=10µA, IC=0
ICBO VCB=100V, IE=0
IEBO VEB=3V, IC=0
VCE( sat) * IC=10mA, IB =1mA
IC=50mA, IB =5mA
VBE(Sat) * IC=10mA,IB=1mA
IC=50mA,IB=5mA
5
100
50
0.3
0.5
0.8
0.65 0.9
V
nA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
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