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PDF 2N5582 Data sheet ( Hoja de datos )
| Número de pieza | 2N5582 | |
| Descripción | SILICON NPN TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N5582
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5582 is a silicon
NPN transistor designed for general purpose amplifier
and switching applications.
MARKING: FULL PART NUMBER
TO-46 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
75
40
6.0
800
600
-65 to +200
292
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
VCB=60V, TA=150°C
ICEV
VCE=60V, VBE=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
0.6
VBE(SAT) IC=500mA, IB=50mA
hFE VCE=10V, IC=100μA
35
hFE VCE=10V, IC=1.0mA
50
hFE VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=10mA, TA=-55°C
35
hFE VCE=10V, IC=150mA
100
hFE VCE=1.0V, IC=150mA
50
hFE VCE=10V, IC=500mA
40
MAX
10
10
10
10
0.3
1.0
1.2
2.0
300
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
R1 (2-December 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5582.PDF ] | |
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