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PDF 2N3507L Datasheet ( Hoja de datos )

Número de pieza 2N3507L
Descripción NPN MEDIUM POWER SILICON TRANSISTOR
Fabricantes Microsemi 
Logotipo Microsemi Logotipo

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2N3507L Hoja de datos, Descripción, Manual
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
DEVICES
2N3506
2N3506A
2N3506L
2N3506AL
2N3507
2N3507A
2N3507L
2N3507AL
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (1)
@ TC = 25°C (2)
Operating & Storage Temperature Range
Note:
1)
2)
Derate linearly 5.71 mW/°C for TA > +25°C
Derate linearly 55.5 mW/°C for TC > +25°C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
2N3506 2N3507
40 50
60 80
5.0
3.0
1.0
5.0
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
Collector-Base Breakdown Voltage
IC = 100µAdc
Emitter-Base Breakdown Voltage
IE = 10µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1Vdc
Forward-Current Transfer Ratio
IC = 1.5Adc, VCE = 2Vdc
Forward-Current Transfer Ratio
IC = 2.5Adc, VCE = 3Vdc
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
Symbol Min.
V(BR)CEO
ICEX
V(BR)CBO
V(BR)EBO
40
50
60
80
5
hFE
50
35
hFE
40
30
hFE
30
25
Max.
1.0
1.0
250
175
200
150
Unit
Vdc
µAdc
Vdc
Vdc
T4-LDS-0016 Rev. 1 (072040)
LEVELS
JAN
JANTX
JANTXV
TO-5 (L-Versions)
TO-39 (TO-205-AD)
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