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PDF 2N3506A Data sheet ( Hoja de datos )
| Número de pieza | 2N3506A | |
| Descripción | NPN MEDIUM POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3506A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2N3506 thru 2N3507A
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
DESCRIPTION
This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature
low saturation voltage. These devices are also available in TO-5 and low profile U4
packaging. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
Qualified Levels:
JAN, JANTX and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3506 through 2N3507A series.
• RoHS compliant versions available (commercial grade only).
• VCR(sat) = 0.5 V @ IC = 500 mA.
• Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
• Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long-leaded)
2N3506L – 2N3507AL
U4 package
(surface mount)
2N3506U4 – 2N3507AU4
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Collector Current
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +110 °C (2)
Operating & Storage Junction Temperature Range
Symbol
V CEO
V CBO
V EBO
R ӨJA
R ӨJC
IC
PD
TJ, Tstg
2N3506 2N3507
40 50
60 80
5.0
175
18
3.0
1.0
5.0
-65 to +200
Notes: 1. Derate linearly 5.71 mW/°C for TA > +25 °C.
2. Derate linearly 55.5 mW/°C for TC > +110 °C.
Unit
V
V
V
oC/W
oC/W
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0016, Rev. 2 (111682)
©2011 Microsemi Corporation
Page 1 of 6
1 page  
GRAPHS
2N3506 thru 2N3507A
Legend
(top to bottom)
VCE = 6 V
VCE = 10 V
VCE = 20 V
VCE = 40 V
VCE = 60 V
TC (oC) (Case)
FIGURE 1
Temperature-Power Derating Curve
NOTE: Thermal Resistance Junction to Case = 18.0 oC/W
.110-5
.110-4 .110-3
.110-2 .110-1
TIME (s)
0.1
1
FIGURE 2
Maximum Thermal Impedance (RӨJC)
10 100
T4-LDS-0016, Rev. 2 (111682)
©2011 Microsemi Corporation
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N3506A.PDF ] | |
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