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PDF 2N2903 Data sheet ( Hoja de datos )
| Número de pieza | 2N2903 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N2903,A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (5. Ta = 25°C
Derate above 25°C
Total Device Dissipation (& Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
•c
PD
Pd
TJ. T stg
Value
30
60
7.0
50
One Die Both Die
200
1.14
300
1.71
0.6
3.43
1.2
6.86
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltaged) dc = 10 mAdc, Ib - 0)
Collector-Base Breakdown Voltage (Iq = 10 puAdc, Ie = 0)
Emitter-Base Breakdown Voltage Oe = 0-1 ^Adc, c) = Q)
Collector Cutoff Current (Vcb 50 Vdc, Ie
(Vcb
=
50
Vdc
-
'E
0)
0,TA
150°C)
Emitter Cutoff Current
(Vbe
=
5.0
Vdc
-
'C
0)
ON CHARACTERISTICS
DC Current Gain
dc = 10 /*Adc, Vce = 5.0 Vdc)
c(l = 10 /xAdc, Vce = 5.0 Vdc, TA = -55°C)
c(l = 1.0 mAdc, Vce = 5 -° vdc)
C =(I 1.0 mAdc, Vce = 5.0 Vdc, T& = -55°C)
Collector-Emitter Saturation Voltage 0c = 5.0 mAdc, Ib = 0-5 mAdc)
mBase-E itter Saturation Voltage dc = 5.0 mAdc, Ib = 0-5 mAdc)
SMALL-SIGNAL CHARACTERISTICS
-Current-Gain
Bandwidth Product
c(l
=
5.0 mAdc, V CE
=
10
vdc
-
f
=
30
MHz)
Output Capacitance
(Vcb
=
10
vdc
-
'E
=
°- f
=
140 kHz)
Input Capacitance (Vbe = °- 5 Vdc, lc = °- f 140 kHz)
Input Impedance dc = 10 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Input Impedance C(l = 10 mAdc, V C B = 5.0 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
dc
=
10 mAdc, Vce
=
50 vdc f
-
=
1 -° kHz)
Voltage Feedback Ratio dc = 10 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz)
mSmall-Signal Current Gain C(l = 1.0 Adc, Vcf = 5.0 Vdc, f = 1.0 kHz)
Output Admittance dc = 10 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Output Admittance
dc
=
10 mAdc, Vcb
=
50 vdc f
-
=
1-0 kHz)
Noise Figure dc = 10 /^dc - Vce = 5.0 Vdc, Rs = 10 kohms, f = 1.0 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2) dc = 10 mAdc, VC E = 5.0 Vdc)
2N2903
2N2903A
Base-Emitter Voltage Differential
dc = 10 uAdc, V C E = 5.0 Vdc)
2N2903
2N2903A
Base-Emitter Voltage Differential Gradient
(lC = 10 nAdc, Vce = 5.0 Vdc, Ta = -55°C to +125°C)
(1 ) Pulse Test: Pulse Width < 300 us. Duty Cycle < 2.0%.
(2) Lowest hFE reading is taken as hpE1 for this ratio.
2N2903
2N2903A
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N2920 for graphs.
Symbol
Min Max
VCEO(sus)
V(BR)CBO
30
60
Vdc
Vdc
V(BR)EBO
7.0
ICBO
0.01
15
fiAdc
lEBO
0.01
tiAdc
"FE
VCE(sat)
VBE(sat)
60
25
125
60
Vdc
Vdc
Cobo
Cjbo
hib
h rb
60
PF
pF
1.0
20 ohms
6.0 X10-4
5.0 X10-4
150 600
5.0 30 /imhos
/imho
dB
hFEl/hFE2
IVBE1-VBE2I
A(VBE1-VBE2)
AT A
0.8
0.9
1.0
1.0
10 mVdc
5.0
uV/°C
20
10
5-15
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| PDF Descargar | [ Datasheet 2N2903.PDF ] | |
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