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Número de pieza | BCW32LT1G | |
Descripción | General Purpose Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! BCW32LT1G
General Purpose
Transistors
NPN Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO 32 Vdc
Collector-Base Voltage
VCBO 32 Vdc
Emitter-Base Voltage
VEBO 5.0 Vdc
Collector Current − Continuous
IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Total Device Dissipation
FR-5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
1.8
Thermal Resistance,
Junction−to−Ambient
RqJA
556
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance,
Junction−to−Ambient
RqJA
417
Junction and Storage Temperature TJ, Tstg −55 to +150
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
D2 M G
G
1
D2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW32LT1G
Package
Shipping†
SOT−23 3000 / Tape & Reel
(Pb−Free)
NSVBCW32LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2000
November, 2016 − Rev. 4
1
Publication Order Number:
BCW32LT1/D
1 page BCW32LT1G
TYPICAL DYNAMIC CHARACTERISTICS
10
TJ = 25°C
7.0 f = 1.0 MHz
Cib
5.0
Cob
3.0
2.0
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
20
50
www.onsemi.com
5
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Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BCW32LT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCW32LT1G | General Purpose Transistor | ON Semiconductor |
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