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PDF SBCW33LT1G Data sheet ( Hoja de datos )
| Número de pieza | SBCW33LT1G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | ON Semiconductor | |
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BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
32 Vdc
32 Vdc
5.0 Vdc
100 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2),
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 6
1
www.onsemi.com
SOT−23
(TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
D3 M G
G
D3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BCW33LT1G
SOT−23 3,000/Tape & Reel
(Pb−Free)
SBCW33LT1G SOT−23 3,000/Tape & Reel
(Pb−Free)
BCW33LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCW33LT1/D
1 page  
BCW33LT1G, SBCW33LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
TJ = 25°C
f = 100 MHz
300
200
VCE = 20 V
5.0 V
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 14. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0 f = 1.0 MHz
Cib
5.0
Cob
3.0
2.0
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitance
20
50
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
P(pk)
FIGURE 19A
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) w RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 16. Thermal Response
104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA
VCC = 30 Vdc
103
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
102 ICEO Figure 16 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 16 by the
101 steady state value RqJA.
Example:
100 ICBO The MPS3904 is dissipating 2.0 watts peak under the following
AND conditions:
10-1
ICEX @ VBE(off) = 3.0 Vdc
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10-2
-4
0
-2
0
The peak rise in junction temperature is therefore
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN−569.
Figure 16A.
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