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PDF BF241 Data sheet ( Hoja de datos )

Número de pieza BF241
Descripción AM/FM TRANSISTORS
Fabricantes Motorola Semiconductors 
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MAXIMUM RATINGS'
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. T s tg
Symbol
Rejc
Rejc
Value
40
40
4.0
25
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BF240
BF241
CASE 29-02, STYLE 21
TO-92 (TO-226AA)
AM/FM TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS <TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC = 2 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 uAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
Collector Cutoff Current
(VcB = 20 Vdc, Ie = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EB0
ICBO
DC Current Gain
(IC = 1 mAdc, VcE = 1 Vdc)
BF240
BF241
hFE
Base-Emitter On Voltage
(IC = 1 .0 mAdc, VcE = 1 Vdc)
SMALL-SIGNAL CHARACTERISTICS
VBE(on)
Current Gain-Bandwidth Product
(If = 1 .0 mAdc, VcE = 1 Vdc, f = 1 00 MHz)
BF240
BF241
fT
Common €mitter Feedback Capacitance
(VCB = 10 Vdc, Ie = 0, f = 1.0 MHz)
Noise Figure
(IC = 1 .0 mAdc, VcE = 1
Vdc, Rs = 200 Q, f = 1 00 KHz)
RS = 50 Q, f = 100 MHz
Cre
Nf
Output Admittance
(IC = 1 mAdc, VcE = 1 ° Vdc, f = 450 KHz)
(f = 10.7 MHz)
(1) Pulse test: Pulse Width S 300 us. Duty cycle S 2.0%.
9oe
Min.
40
40
4
65
35
.65
Typ.
Max.
100
Unit
Vdc
Vdc
Vdc
nAdc
.70
600
470
.28
2.5
220
125
.74
Vdc
MHz
.34
3.5
8.3
10.5
pF
dB
u,mho
2-153

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