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PDF BDC03 Data sheet ( Hoja de datos )

Número de pieza BDC03
Descripción ONE WATT AMPLIFIER TRANSISTORS
Fabricantes Motorola Semiconductors 
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No Preview Available ! BDC03 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
c.
PD
pd
Tj, T s tg
Symbol
R0JC
R#JC
Value
20
25
5.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BDC03
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to MPSW01 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, lc = 0)
Collector Cutoff Current
(VCB = 25 Vdc, Ie = 0)
Emitter Cutoff Current
(Veb = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 500 mAdc, Vce = 1 Vdc)
(IC = 5 mAdc, Vce = 10 Vdc)
dC = 1000 mAdc, Vce = 1 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1000 mAdc, Ib = 100 mAdc)
Base-Emitter On Voltage
(IC = 1 000 mAdc, Vce = 1 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
dC = 50 mAdc, Vce = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 1 Vdc, Ie = 0, f = 1 .0 MHz)
(1) Pulse Test: Pulse Width S 300 us, Duty Cycle £ 2.0%.
Symbol
V(BR)CE0
V(BR)CBO
V(BR)EB0
ICB0
lEBO
hFE
VcE(sat)
VBE(on)
fT
Cobo
Min.
20
25
5.0
87
50
60
50
Max.
0.1
0.1
375
0.5
1.2
20
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
Vdc
Vdc
MHz
PF
2-147

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