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PDF BDB03 Data sheet ( Hoja de datos )
| Número de pieza | BDB03 | |
| Descripción | ONE WATT AMPLIFIER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BDB03 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @1q = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
Rwc
Rwc
Value
45
60
5.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
BDB03
CASE 29-03, STYLE 1
TO-92 (T0-226AE)
ONE WATT
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to BDB01 A for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ib = 0)
V(BR)CES
Collector Cutoff Current
(V C B = 45 V, El = 0)
Emitter Cutoff Current
(VEB = 4 V, Ic = 0)
ON CHARACTERISTICS
ICBO
lEBO
DC Current Gain
(IC = 150 mA, VcE = 1
0C = 1 A, V C E = 10 V)
V)
Collector-Emitter Saturation Voltage
(IC = 150 mA, IB = 15 mA)
hFE
VcE(sat)
Base-Emitter Saturation Voltage
.(IC = 150 mA, Ib = 15 mA)
SMALL-SIGNAL CHARACTERISTICS
VBE(sat)
Current-Gain Bandwidth Product
HC = 50 mA, VCE = 1 V, f = 1 00 MHz)
fT
Collector-Base Capacitance
(Vcb = 10 V, f = 1 MHz)
Ccb
45
—
—
100
15
—
—
150
—
Typ.
—
—
—
Max.
—
0.1
0.1
Unit
Vdc
uAdc
uAdc
-
—
—
-
300
1.1
1.1
——
— 15
Vdc
Vdc
MHz
PF
2-141
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BDB03.PDF ] | |
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