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Número de pieza | BCX59 | |
Descripción | AMPLIFIER TRANSISTORS | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCX59 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
vceo
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
Ryjc
Rejc
BCX BCX
58 59
32 45
32 45
7.0
100
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCX58
BCX59
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Type
Symbol
OFF CHARACTERISTICS
Min.
Typ.
Collector-Emitter Breakdown Voltage
dC = 10 mAdc, Ib = 0)
BCX58
BCX59
V(BR)CE0
32
45
Emitter-Base Breakdown Voltage
(IE = 1 uAdc, CI = 0)
all
V(BR)EBO
7
8.7
Collector Cutoff Current
(V C E = 32 V
(V C E = 45 V)
(V C E = 32 V, TA = 100°C, VBE = 0,2 V)
(VcE = 45 V, Ta = 100°C, Vbe = 0,2 V)
(VC E = 32 V, TA = 125°C)
(V C E = 45 V, TA = 125°C)
ON CHARACTERISTICS
BCX58
BCX59
BCX58
BCX59
BCX58
BCX59
ices
ices
icex
'CEX
ices
ices
DC Current Gain
(IC = 1 uAdc, Vqe = 5 Vdc)
(IC = 2 mAdc, Vce = 5 Vdc)
(IC = 10 mAdc, Vce = 1 Vdc)
(IC = 100 mAdc, Vce = 2 Vdc)
BCX59-7, BCX58-7
BCX59-8, BCX58-8
BCX59-9, BCX58-9
BCX59-10, BCX58-10
BCX59-7, BCX58-7
BCX59-8, BCX58-8
BCX59-9, BCX58-9
BCX59-10, BCX58-10
BCX59-7, BCX58-7
BCX59-8, BCX58-8
BCX59-9, BCX58-9
BCX59-10, BCX58-10
BCX59-7, BCX58-7
BCX59-8, BCX58-8
BCX59-9, BCX58-9
BCX59-10, BCX58-10
hFE
20 80
40 145
75 220
100 300
120 170
180 250
250 350
380 500
80 190
120 260
160 380
240 550
40
45
60
60
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 5 mAdc)
(IC = 10 mAdc, Ib = see note 1)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 100 mA, Ib = 5 mA)
VBE(sat)
Base-Emitter On Voltage
(IC = 2 mAdc, Vce = 5 Vdc)
VBE(on)
0.55
0.62
mANote
1
:
Ic
=
10
on the constant base current characteristic which yield the point Ic = 11 mA, VcE = 5 V
Max.
10
10
20
20
2.5
2.5
220
310
460
630
400
630
1000
0.5
0.6
1.3
0.70
Unit
Vdc
Vdc
nAdc
uAdc
Vdc
Vdc
Vdc
2-131
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet BCX59.PDF ] |
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