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PDF BC651 Data sheet ( Hoja de datos )
| Número de pieza | BC651 | |
| Descripción | LOW NOISE AUDIO TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
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S
BC650, S
BC651, S
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
LOW NOISE AUDIO
TRANSISTORS
NPN SILICON
Refer to MPSA18 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation !TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
PD
PD
Tj. T stg
Symbol
Rojc
p>ajc
BC BC
650.S 651,
45
30 45
6.0
200
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1-0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, Ie = 0)
BC650
BC651
BC650
BC651
Collector Cutoff Current
(Vcb = 30 Vdc, Ie = 0)
Collector-Emitter Leakage Current
(V C E = 60 V)
Emitter Cutoff Current
(Veb = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 2 mAdc, Vce = 5 Vdc)
BC650/BC651
BC650C/BC651C
BC650D/BC651D
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 0.5 mAdc)
(IC = 100 mAdc, Ib = 5.0 mAdc)
Base Emitter On Voltage
dC = 2 mAdc, Vce = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Input Impedance
(IC = 2 mAdc, Vce = 5.0 Vdc, f = 1 .0 kHz)
BC650C/BC651 C
BC650D/BC651 D
Voltage Feedback Ratio
(IC = 2 mAdc, Vce = 5.0 Vdc, f = 1 .0 kHz)
BC650C/BC65 1 C
BC650D/BC65 1 D
Output Admittance
dC = 2 mAdc, Vce = 5.0 Vdc, f = 1 .0 kHz)
BC650C/BC651 C
BC650D/BC65 1 D
Small Signal Current Gain
(IC = 2 mAdc, Vce = 5.0 Vdc, f = 1 .0 kHz)
BC650/BC651
Output Capacitance (Vcb = 1 Vdc, Ie = 0, f = 1 .0 MHz)
Input Capacitance (V£B = 0.5 Vdc, Ie = 0, f = 1 .0 MHz)
Current Gain-Bandwidth Product
(IC = 1 .0 mAdc, Vce = 5.0 V, f = 1 00 MHz)
Symbol
v BR)CE0
v (BR)CB0
icbo
ices
lEBO
hFE
VCE(sat)
VBE(on)
hie
hre
hoe
hfe
Cob
Cib
fT
Min.
30
45
30
45
_
_
_
380
380
680
-
0.55
2.0
4.0
1.0
2.0
10
20
380
—
—
100
Max.
—
—
0.015
0.025
0.015
Unit
Vdc
Vdc
^A
uA
uA
1400
820
1400
0.2
0.6
0.70
20
60
30
60
60
120
1600
3.0
8.0
700
Vdc
Vdc
kQ
x10" 4
u.mhos
—
pF
pF
MHz
BC650, BC651, C, D
BC650S, BC651S, CS, DS
BW(1) RS = 2 kQ,
= 1 .0 Hz, f = 1
Hz;
NF VT
Max. (1)
NF VT
Max. (2)
NF VT
Max. (3)
14.4
3.5
8.6
2.8
dB nV
10.2
2.3
7.5
2
dB nV
BW(2) RS = 2 kQ,
= 1 .0 Hz, f = 1 20 Hz;
BW(3) RS = 2 kQ,
= 1 .0 Hz, f = 1 KHz
2-122
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BC651.PDF ] | |
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