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PDF BC638 Data sheet ( Hoja de datos )
| Número de pieza | BC638 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC638 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES
ᴌComplementary to BC637.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
RATING
-60
-60
-5
-500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
ᴱ
ᴱ
BC638
EPITAXIAL PLANAR PNP TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Input Capacitance
ICBO
V(BR)CEO
V(BR)CBO
V(BR)EBO
hFE
VCE(sat)
VBE
fT
Cib
Collector Output Capacitance
Cob
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
TEST CONDITION
VCB=-30V, IE=0
IC=-10mA, IB=0
IC=-100ỌA, IE=0
IE=-10ỌA, IC=0
VCE=-2V, IC=-150mA
IC=-500mA, IB=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-50mA, f=100MHz
VEB=-0.5V, IC=0, f=1MHz
VCB=-10V, IE=0, f=1MHz
MIN.
-
-60
-60
-5.0
-40
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
150
50
9.0
MAX.
-100
-
-
-
160
-0.5
-1.0
-
-
-
UNIT
nA
V
V
V
V
V
MHz
pF
pF
2000. 10. 2
Revision No : 0
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BC638.PDF ] | |
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