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PDF BC337-40 Data sheet ( Hoja de datos )
| Número de pieza | BC337-40 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES
Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
Collector-base voltage
VCBO:
BC337 50 V
BC338 30 V
Operating and storage junction temperature range
3. EMITTER
123
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
VCBO
VCEO
Ic= 100µA, IE=0
IC= 10 mA , IB=0
50
30
45
25
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
BC337
BC338
BC337
BC338
Emitter cut-off current
VEBO
ICBO
ICEO
IEBO
IE= 10µA, IC=0
VCB= 45 V, IE=0
VCB= 25V, IE=0
VCE= 40 V, IB=0
VCE= 20 V, IB=0
VEB= 4 V, IC=0
5
0.1
0.1
0.2
0.2
0.1
UNIT
V
V
V
V
V
µA
µA
µA
µA
µA
DC current gain
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
hFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
VCE=1V, IC= 100mA
VCE=1V, IC= 300mA
IC=500 mA, IB= 50 mA
IC= 500 mA, IB=50 mA
VCE= 5V, IC= 10mA
f = 100MHz
100
100
160
250
60
210
630
250
400
630
0.7 V
1.2 V
MHz
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BC337-40.PDF ] | |
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