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PDF 2N5640 Data sheet ( Hoja de datos )
| Número de pieza | 2N5640 | |
| Descripción | JFET SWITCHING | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Switching
N–Channel — Depletion
Order this document
by 2N5640/D
2N5640
1 DRAIN
3
GATE
2 SOURCE
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS 30 Vdc
Drain–Gate Voltage
Reverse Gate–Source Voltage
VDG
VGSR
30
30
Vdc
Vdc
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
IGF
PD
10 mAdc
350 mW
2.8 mW/°C
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
RqJA
TJ
Tstg
357
– 65 to +150
– 65 to +150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Drain Cutoff Current
(VDS = 15 Vdc, VGS = –6.0 Vdc)
(VDS = 15 Vdc, VGS = –6.0 Vdc, TA = 100°C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 20 Vdc, VGS = 0)
Drain–Source On–Voltage
(ID = 3.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 1.0 mAdc, VGS = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 3.0%.
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Symbol
Min
V(BR)GSS
IGSS
ID(off)
30
—
—
—
—
IDSS
VDS(on)
rDS(on)
5.0
—
—
Max Unit
— Vdc
1.0 nAdc
1.0 µAdc
1.0 nAdc
1.0 µAdc
— mAdc
0.5 Vdc
100 Ohms
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
PACKAGE DIMENSIONS
R
SEATING
PLANE
AB
P
L
F
K
XX
H
V
G
C
1
N
N
D
J
SECTION X–X
CASE 029–04
(TO–226AA)
ISSUE AD
2N5640
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.022
F 0.016 0.019
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 –––
L 0.250 –––
N 0.080 0.105
P ––– 0.100
R 0.115 –––
V 0.135 –––
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.41 0.55
0.41 0.48
1.15 1.39
2.42 2.66
0.39 0.50
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
2.93 –––
3.43 –––
STYLE 5:
PIN 1.
2.
3.
DRAIN
SOURCE
GATE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N5640.PDF ] | |
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