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PDF 2N4404 Data sheet ( Hoja de datos )

Número de pieza 2N4404
Descripción GENERAL PURPOSE TRANSISTOR
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! 2N4404 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (a T"a = 25°C
Derate above 25°C
Total Device Dissipation (a Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
pd
pd
TJ. T stg
Value
80
80
5.0
1.0
1.25
7.15
8.75
50
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
R0JA
Max
Unit
°C/W
°c/w
2N4404
2N4405
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) (\q = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ip = 10 j^Adc, Ie = 0)
Emitter-Base Breakdown Voltage 0e = 10 /*Adc, lp
Collector Cutoff Current (Vcb 60 Vdc, Ie = 0)
Emitter Cutoff Current (Vbe = 3.0 Vdc, Ic = 0)
0)
ON CHARACTERISTICS
DC Current Gain
c(l = 0.1 mAdc, Vce = 5.0 Vdc)
2N4404
2 N 4405
c(l = 10 mAdc, Vce = 5.0 Vdc)
2N4404
2N4405
(IC = 150 mAdc, Vce = 5.0 VdcXD
2N4404
2N4405
c(l = 500 mAdc, Vce = 5.0 Vdc)(1)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 10 mAdc)
(IC = 150 mAdc, Ib = 15 mAdc)(1)
dC = 500 mAdc, Ib = 50 mAdc)(1)
Base-Emitter Saturation Voltage
(Ic = 10 mAdc, Ib = 1-0 mAdc)
(I'C = 500 mAdc, Bl = 50 mAdc)(1)
Base-Emitter On Voltage
C(l = 150 mAdc, V C e = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
C(l = 50 mAdc, VC e = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 vdc Ie = o, f = 1.0 mhz)
Emitter-Base Capacitance
(v B e = °-5 vdc ic = o. f
1.0 MHz)
2N4404
2N4405
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
lEBO
hFE
Max
25
Vdc
Vdc
40
100
40 120
100 300
VcE(sat)
VBE(sat)
VBE(on)
0.85
0.1.5
0.2
0.5
0.8
1.2
Vdc
Vdc
Ccb
Ceb
PF
PF
4-167

1 page




2N4404 pdf
2N4404, 2N4405
FIGURE 17 - "ON" VOLTAGES
5 0.4
I
V
B E(sa
c"b = 1
^II
IT
J
" v BE(on)^ v CE=' 0V
I
'
v
r
E(sat»
@, r'>B^
-44t=f-
1.0 2.0 3.0 5.0
10
20 30 50 100 200 300 600 1000
cl , COLLECTOR CURRENT (mA)
FIGURE 18 - TEMPERATURE COEFFICIENTS
!
!Mil!l
-i
'
j!
I
-
i
!
\
>—•—t
1-2.0
M-f-
-•-j—
"
r!
Ml
1
41 u±—
vc forV CE(sat)
*v
ji
1
jl
J;
-i
VB ll r "Bh
:
j
I
'
t
1
i
i|
I
ii
1.0 2.0 3.0 5.
10
20 30 50
!
ll
100 200 300 500 1000
IC. COLLECTOR CURRENT (mA)
RATINGS AND THERMAL DATA
FIGURE 19 - SAFE OPERATING AREA
0.1
I
3 0.07 I
0.05
l\ ' '
s
\v V
N i\i
N
J
P\
i
-N\~0.1 m
4—
-dc-^-I.Oms
Tj = 200 C
\i
SECONDARY BREAKDOVm LIMITED^
BONDINGWIRE LIMITED
THERMALLY LIMITED
Trj = 25°C (SINGLE PULSE )
CURVES APPLY BELOW
H Alb JV ZE ]
,
2.0 3.0
5.0 7.0 10
20 30
50
V CE . COLLECTOR-EMITTER VOLTAGE (VOLTS)
The safe operating area curves indicate Iq-Vq^
limits of the transistor that must be observed for re-
liable operation. Collector load lines for specific cir-
cuits must fall below the limits indicated bv the ap-
plicable curve.
The
data
of
Figure
19
is based
upon
Tjj
=
kj
200'C, Tq is variable depending upon conditions.
Pulse curves are valid for duty cycles to 10% pro-
vided Tj(
< 200 'C. Tjj
may be calculated
kj k)
from the data in Figure 20. At high case tempera-
tures, thermal limitations will reduce the power that
can be handled to values less than the limitations im-
posed by second breakdown.
4-171

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