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PDF 2N3501L Data sheet ( Hoja de datos )
| Número de pieza | 2N3501L | |
| Descripción | NPN SILICON SWITCHING TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DEVICES
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
2N3501UB
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
2N3498* 2N3501*
2N3499* 2N3501*
VCEO
100
150
Collector-Base Voltage
VCBO
100
150
Emitter-Base Voltage
VEBO
6.0
6.0
Collector Current
Total Power Dissipation
@ TA = +25°C
@ TC = +25°C
Operating & Storage Junction Temperature Range
IC
PT
TJ, Tstg
500 300
1.0
5.0
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
30
175
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
1. Derate linearly 5.71 W/°C for TA > 25°C
2. Derate linearly 28.6 W/°C for TC > 25°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N3498, 2N3499
2N3500, 2N3501
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 75Vdc
VCB = 100Vdc
VCB = 150Vdc
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
V(BR)CEO
ICBO
100
150
50
50
10
10
Unit
Vdc
ηAdc
ηAdc
μAdc
μAdc
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
TO-5*
2N3498L, 2N3499L
2N2500L, 2N3501L
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
3 PIN
2N3501UB
T4-LDS-0056 Rev. 1 (080812)
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3501L.PDF ] | |
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