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PDF 2N3299 Data sheet ( Hoja de datos )
| Número de pieza | 2N3299 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
2N3301
2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(Applicable to 10 mAdc)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
ic
Value
30
60
5.0
500
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
@Total Device Dissipation TA = 2F°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
Pd
TJ- Tstg
2N3299 2N3301
2N3300 2N3302
0.8
4.56
0.36
2.06
3.0
17.2
1.8
10.3
- 65 to + 200
Refer to 2N2218 for graphs.
ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage! 1) 0c = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage Oc = 10 /xAdc, Ie = 0)
Emitter-Base Breakdown Voltage (lg = 10 /nAdc, \q = 0)
Collector Cutoff Current (Vce = 50 Vdc, VgE = 0)
(VC E = 50 Vdc, V B e = 0, TA = 150°C)
Emitter Cutoff Current (Vbe = 3.0 Vdc, \q = 0)
Base Current (Vce = 50 Vdc, Vbe = 0)
ON CHARACTERISTICS
Symbol
vCEO(sus)
v (BR)CBO
v (BR)EBO
Ices
Iebo
>B
30
60
5.0
z
—
—
Max
_
—
—
0.01
10
10
10
DC Current Gain
Oc = 0.1 mAdc, VCE = 10 Vdc)
dC = 1.0 mAdc, V C e = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)(1)
dC = 150 mAdc, VC E = 1.0 Vdc)(1)
dC = 150 mAdc, VC E = 10 Vdc)(1)
dC = 500 mAdc, VC E = 10 Vdc)(1)
2N3299, 2N3301
2N3300, 2N3302
2N3299, 2N3301
2N3300, 2N3302
2N3299, 2N3301
2N3300, 2N3302
2N3299, 2N3301
2N3300, 2N3302
2N3299, 2N3301
2N3300, 2N3302
2N3299, 2N3301
2N3300, 2N3302
Collector-Emitter Saturation Voltage
Oc = 150 mAdc, Ib = 15 mAdc)
OC = 300 mAdc, Ib = 30 mAdc)
OC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltage
(Ic = 150 mAdc, Ib = 15 mAdc)
dC = 300 mAdc, Ib = 30 mAdc)
OC = 500 mAdc, Ib = 50 mAdc)
Base Emitter Voltage Oc = 150 mA, Vce = 10 V)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product Oc = 50 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance (Vcb = 10 Vdc, Ie = 0, f = 140 kHz)
Input Capacitance (Vbe = 2.0 Vdc, Ic = 0, f = 140 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time (Vce = 25 Vdc, Ic = 300 mAdc, Ibi = 30 mAdc)
Turn-Off Time (Vce = 25 Vdc, Ic = 300 mAdc, Iq-j = Ib2 = 30 mAdc)
(1) Pulse Test: Pulse Width =s 300 jus, Duty Cycle =s 2.0%.
hFE
v CE(sat)
v BE(sat)
v BE(on)
fT
C bo
Cjt>o
l on
toff
20
35
25
50
35
75
20
50
40
100
20
50
—
—
-
250
—
-
.
—
-
120
300
0.22
0.45
0.6
1.1
1.3
1.5
1.1 V
—
8.0
20
60
150
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°c
Unit
Vdc
Vdc
Vdc
jiAdc
nAdc
nAdc
Vdc
Vdc
Max
MHz
pF
pF
ns
ns
4-78
1 page | ||
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| PDF Descargar | [ Datasheet 2N3299.PDF ] | |
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