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PDF 2N2918 Data sheet ( Hoja de datos )
| Número de pieza | 2N2918 | |
| Descripción | DUAL SILICON NPN TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N2918
DUAL SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2918 is a Dual
Silicon NPN Transistor utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Power Dissipation (One Die, TC=25°C)
Power Dissipation (Both Dice, TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
PD
TJ, Tstg
45
45
6.0
30
300
500
750
1.5
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICEO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
NF
VCB=45V
VCE=5.0V
VEB=5.0V
IC=10μA
IC=10mA
IE=10μA
IC=1.0mA, IB=0.1mA
VCE=5.0V, IC=100μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=10μA, TA=–55°C
VCE=5.0V, IC=100μA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=140kHz
VCE=5.0V, IC=10μA, RS=10kΩ,
f=1.0kHz, BW=200Hz
45
45
6.0
150
30
225
300
60
hFE1/hFE2
VCE=5.0V, IC=100μA
|VBE1-VBE2| VCE=5.0V, IC=10μA
|VBE1-VBE2| VCE=5.0V, IC=100μA
|VBE1-VBE2| VCE=5.0V, IC=1.0mA
Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=–55°C to +25°C
Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=+25°C to +125°C
0.8
MAX
10
2.0
2.0
0.35
0.70
600
6.0
3.0
1.0
10
5.0
10
1.6
2.0
UNITS
V
V
V
mA
mW
mW
mW
W
°C
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
dB
mV
mV
mV
mV
mV
R1 (4-March 2011)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N2918.PDF ] | |
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