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PDF 2N2223 Data sheet ( Hoja de datos )
| Número de pieza | 2N2223 | |
| Descripción | DUAL NPN TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N2223
2N2223A
SILICON
DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A
are dual silicon NPN transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
PD
PD
TJ, Tstg
100
80
60
7.0
500
500
600
-65 to +200
UNITS
V
V
V
V
mA
mW
mW
°C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
ICBO
IEBO
VCB=80V
VCB=80V, TA=150°C
VEB=5.0V
10
15
10
BVCBO
BVCER
BVCEO
BVEBO
IC=100μA
IC=100mA, REB=10Ω
IC=30mA
IE=100μA
100
80
60
7.0
VCE(SAT)
VBE(SAT)
hFE
hFE
IC=50mA, IB=5.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
1.2
0.9
15
25 150
hFE VCE=5.0V, IC=10mA
50
fT
VCE=10V, IC=50mA, f=20MHz
50
Cob VCB=10V, IE=0, f=1.0MHz
Cib VBE=0.5V, IC=0, f=1.0MHz
200
15
85
hib
VCB=5.0V, IC=1.0mA, f=1.0kHz
20
hrb VCB=5.0V, IC=1.0mA, f=1.0kHz
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
40
hob VCB=5.0V, IC=1.0mA, f=1.0kHz
30
3.0
200
0.5
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
Ω
x10-4
μS
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
hFE1/hFE2 (Note 1) VCE=5.0V, IC=100μA
|VBE1-VBE2|
VCE=5.0V, IC=100μA
Notes: (1) The lowest reading is taken as hFE1.
2N2223
MIN MAX
0.8 1.0
- 15
2N2223A
MIN MAX
0.9 1.0
- 5.0
UNITS
mV
R0 (22-January 2014)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2223.PDF ] | |
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