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PDF 2N998 Data sheet ( Hoja de datos )
| Número de pieza | 2N998 | |
| Descripción | DARLINGTON TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N998
CASE 20-03, STYLE 8
T072 (TO206AF)
DARLINGTON TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
'C
PD
PD
Tj, T stg
Value
60
100
15
500
500
2.86
1.8
10.3
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
rELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1) \q = 30 mAdc, Ib =
Collector-Base Breakdown Voltage
lc = 100 jiAdc, l£ =
Emitter-Base Breakdown Voltage
IE = 100 (iAdc, lc =
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
Vcb = 90 V, Ie =
Vcb = 90 V, IE = 0, TA
Vbe = 10 V, lc =
DC Current Gain (lc 1 mAdc, Vce = 5 Vdc)
dc 10 mAdc, Vce = 5 Vdc)
('C 100 mAdc, Vce = 5 Vdc)
dc 10 mAdc, Vce = 5 Vdc) (2)
SMALL-SIGNAL CHARACTERISTICS
150°C
Small-Signal Current Gain (lc = 1 mAdc, Vce = 5 Vdc, f = 1 kHz)
Output Capacitance (Vcb = 1 Vdc, lg = 0, f = 100 kHz)
Input Capacitance (Vbe = 0.5 Vdc, lc = 0, f = 100 kHz)
Noise Figure (lc = 100 uAdc, Vce = 10 Vdc, Rs = 5 kohms, f = 1 kHz, Af = 200 Hz)
^2%(1) Pulse Test: Pulse Width <300 us, Duty Cycle
(2) Measured across each transistor within the device
Symbol
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
>EBO
hFE
Cobo
Cibo
NF
Min
15
800
1600
2000
25
Max
0.01
15
0.01
8000
30
50
Unit
Vdc
Vdc
Vdc
nAdc
^Adc
pF
pF
C|C 2
The input unit is identified as Untt 1 regard-
less of terminal numbering.
5-2
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N998.PDF ] | |
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