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PDF BAV70 Data sheet ( Hoja de datos )
| Número de pieza | BAV70 | |
| Descripción | SWITCHING DIODE | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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 1. 100V, Switching Diode - NXP  Hay una vista previa y un enlace de descarga de BAV70 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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BAV70
CASE 318-02/03, STYLE 9
SOT-23 (TO-236AA/AB)
SWITCHING DIODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
if
'FM(surqe)
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
"Thermal Resistance Junction to Ambient
R £UA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Characteristic
Reverse Breakdown Voltage
(l(BR) = 100 AtAdc)
Reverse Voltage Leakage Current
(V R = 25 Vdc, Tj = 150°C)
(VR = 70 Vdc)
(Vr = 70 Vdc, Tj = 150°C)
Diode Capacitance
(Vr = 0, f = 1.0 MHz)
Forward Voltage
(If = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(lp = 100 mAdc)
Reverse Recovery Time
(IF = iR = 10 mAdc, Vr = 5.0 Vdc,
'R(REC) = 1-0 mAdc) (Figure 1)
Symbol
V (BR)
Min
>70
CT
VF
Value
70
200
500
Max
350
2.8
150
357
Max
60
5.0
100
715
855
1100
1300
6.0
820 ft
+ 10 V
—FIGURE 1
Recovery Time Equivalent Test Circuit
— —r (-* *p »»|
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
jtiAdc
PF
mVdc
INPUT SIGNAL
'R(REC)=10 mA
OUTPUT PULSE
IF = lR = 10 mA; measured
at 'R(REC) = 10 mA)
Notes: 1. A 2.0 kft variable resistor adjusted for a Forward Current (If) of 10 mA.
2. Input pulse is adjusted so lR(peak) is equal to 10 mA.
3-4
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BAV70.PDF ] | |
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