|
|
PDF P2N5551 Data sheet ( Hoja de datos )
| Número de pieza | P2N5551 | |
| Descripción | AMPLIFIER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de P2N5551 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
T
P2N5550
P2N5551
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating
Symbol 2N 2N
5550 5551
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation T/\ = 25°C
Derate above 25°C
Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
ic
PD
pd
Tj, st g
140 160
160 180
6.0
600
625
5.0
1.5
12
-55 to +150
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rfjjc
83.3
°C/W
Thermal Resistance, Junction to Ambient RfjJA
200
°c/w
(1) RftJA is mesured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS <TA = 25 °C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (2)
(IC = 10 mAdc, Ib = 0)
P2N5550
P2N5551
Collector-Base Breakdown Voltage
dC = 100uAdc, IE = 0)
P2N5550
P2N5551
Emitter-Base Breakdown Voltage
(IE = 10 nAdc, Ic = 0)
Collector Cutoff Current
(VcB = 100 Vdc, El = 0)
(V C B = 120 Vdc, Ie = 0)
(VcB = 100 Vdc, l£ = 0, Ta = 100°C)
(VcB = 120 Vdc, l£ = 0. Ta = 100°C)
P2N5550
P2N5551
P2N5550
P2N5551
Emitter Cutoff Current
(V E b = 4.0 Vdc, Cl = 0)
ON CHARACTERISTICS (2)
DC Current Gain
dC = 1 mAdc, Vce = 5.0 Vdc)
(lC = 10 mAdc, Vce = 5.0 Vdc)
(lC = 50 mAdc, Vce = 5.0 Vdc)
P2N5550
P2N5551
P2N5550
P2N5551
P2N5550
P2N5551
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 10 mAdc)
(lC = 50 mAdc, Ib = 5.0 mAdc)
Both Types
P2N5550
P2N5551
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 10 mAdc)
(lC = 50 mAdc, Ib = 5.0 mAdc)
Both Types
P2N5550
P2N5551
Symbol
V(BR)CEO
V(BR)CB0
V(BR)EBO
•ICBO
lEBO
hFE
VCE(sat)
VBE(sat)
140
160
160
180
6.0
—
—
60
80
60
80
20
30
—
Max
—
—
100
50
100
50
50
-
250
250
0.15
0.25
0.20
1.0
1.2
1.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
Vdc
Vdc
2-296
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet P2N5551.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| P2N5550 | AMPLIFIER TRANSISTORS | Motorola Semiconductors |
| P2N5551 | AMPLIFIER TRANSISTORS | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |